零件编号
UPA828
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生产厂家
NEC => Renesas Technology
UPA828 数据手册 ( 数据表 ) - NEC => Renesas Technology
NEC => Renesas Technology
FEATURES
• Low noise
NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• 6-pin thin-type small mini mold package adopted
• Built-in 2 transistors (2 u 2SC5184)
零件编号
产品描述 (功能)
视图
生产厂家
HIGH-FREQUENCY LOW-NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 6-PIN 2 u 2SC4959) THIN -TYPE SMALL MINI MOLD
NEC => Renesas Technology
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TWIN TRANSISTOR (WITH BUILT-IN 6-PIN 2 u 2SC5179) THIN-TYPE SMALL MINI MOLD
NEC => Renesas Technology
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 × 2SC4226) SMALL MINI MOLD
NEC => Renesas Technology
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 ×2SC4226) SMALL MINI MOLD
Renesas Electronics
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 ELEMENTS) MINI MOLD
NEC => Renesas Technology
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 6-PIN 2 ELEMENTS) MINI MOLD
Renesas Electronics
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4228) SMALL MINI MOLD
Renesas Electronics
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4228) SMALL MINI MOLD
NEC => Renesas Technology
HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 × 2SC4227) SMALL MINI MOLD
NEC => Renesas Technology
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