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UPA1980TE-T1 数据手册 ( 数据表 ) - NEC => Renesas Technology

UPA1980 image

零件编号
UPA1980TE-T1

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8 Pages

File Size
75.8 kB

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NEC => Renesas Technology 

DESCRIPTION
The µ PA1980 is a switching device, which can be driven directly by a 1.8 V power source.
This device incorporates a MOS FET, which features a low on-state resistance and excellent switching characteristics, and a low leakage Schottky barrier diode, and is suitable for applications such as DC/DC converter of portable machine and so on.


FEATURES
• 1.8 V drive available (MOS FET)
• Low on-state resistance (MOS FET)
    RDS(on)1 = 135 mΩ MAX. (VGS = −4.5 V, ID = −1.0 A)
    RDS(on)2 = 183 mΩ MAX. (VGS = −2.5 V, ID = −1.0 A)
    RDS(on)3 = 284 mΩ MAX. (VGS = −1.8 V, ID = −0.5 A)
• Low reverse current (Schottky barrier diode)
    IR = 20 µA MAX. (VR = 40 V)

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零件编号
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NEC => Renesas Technology
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NEC => Renesas Technology
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NEC => Renesas Technology
P-CHANNEL MOS FET FOR SWITCHING
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NEC => Renesas Technology

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