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UPA1858GR-9JG 数据手册 ( 数据表 ) - NEC => Renesas Technology

UPA1858 image

零件编号
UPA1858GR-9JG

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8 Pages

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71.2 kB

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NEC
NEC => Renesas Technology 

DESCRIPTION
The µPA1858 is a switching device, which can be driven directly by a 2.5 V power source.
This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power management of portable machine and so on.


FEATURES
• 2.5 V drive available
• Low on-state resistance
    RDS(on)1 = 24.5 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A)
    RDS(on)2 = 25.5 mΩ MAX. (VGS = −4.0 V, ID = −2.5 A)
    RDS(on)3 = 38 mΩ MAX. (VGS = −2.5 V, ID = −2.5 A)
• Built-in G-S protection diode against ESD

Page Link's: 1  2  3  4  5  6  7  8 

零件编号
产品描述 (功能)
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生产厂家
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
PDF
NEC => Renesas Technology

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