UPA1812GR-9JG 数据手册 ( 数据表 ) - NEC => Renesas Technology
生产厂家

NEC => Renesas Technology
DESCRIPTION
The µPA1812 is a switching device which can be driven directly by a 4.0-V power source.
The µPA1812 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
FEATURES
• Can be driven by a 4.0-V power source
• Low on-state resistance
RDS(on)1 = 39 mΩ MAX. (VGS = –10 V, ID = –2.5 A)
RDS(on)2 = 63 mΩ MAX. (VGS = –4.5 V, ID = –2.5 A)
RDS(on)3 = 69 mΩ MAX. (VGS = –4.0 V, ID = –2.5 A)
Page Link's:
1
2
3
4
5
6
7
8
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology