UPA1759G 数据手册 ( 数据表 ) - NEC => Renesas Technology
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NEC => Renesas Technology
DESCRIPTION
This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters.
FEATURES
• Dual chip type
• Low on-resistance
RDS(on)1 = 110 mΩ TYP. (VGS = 10 V, ID = 2.5 A)
RDS(on)2 = 170 mΩ TYP. (VGS = 4 V, ID = 2.5 A)
• Low input capacitance Ciss = 190 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
TY Semiconductor