UPA1755G-E1 数据手册 ( 数据表 ) - NEC => Renesas Technology
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NEC => Renesas Technology
DESCRIPTION
This product is Dual N-channel MOS Field Effect Transistor designed for DC/DC converters and power management applications of notebook computers.
FEATURES
• Dual chip type
• Low on-resistance
RDS(on)1 = 32 mΩ MAX. (VGS = 10 V, ID = 3.5 A)
RDS(on)2 = 45 mΩ MAX. (VGS = 4.5 V, ID = 3.5 A)
• Low input capacitance Ciss = 895 pF TYP.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)
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SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
Renesas Electronics
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
NEC => Renesas Technology