DESCRIPTION
This product is N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers.

FEATURES
• Super Low On-Resistance
    RDS(on)1 = 10.5 mΩ MAX. (VGS = 10 V, ID = 5.0 A)
    RDS(on)2 = 17 mΩ MAX. (VGS = 4 V, ID = 5.0 A)
• Low Ciss Ciss = 2180 pF TYP.
• Built-in G-S Protection Diode
• Small and Surface Mount Package (Power SOP8)