UP2003(2014) 数据手册 ( 数据表 ) - Unisonic Technologies
生产厂家

Unisonic Technologies
DESCRIPTION
The UP2003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
FEATURES
* RDS(ON)<35 mΩ @ VGS =-4.5 V, ID =-7 A
* RDS(ON)<20 mΩ @ VGS =-10 V, ID =-9 A
25V; 12A N-channel logic level enhancement mode field effect transistor
Niko Semiconductor
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Excelliance MOS Corp.
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Excelliance MOS Corp.
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Excelliance MOS Corp.
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Excelliance MOS Corp.
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Excelliance MOS Corp.
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Excelliance MOS Corp.
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Excelliance MOS Corp.
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Excelliance MOS Corp.
P‐Channel Logic Level Enhancement Mode Field Effect Transistor
Excelliance MOS Corp.