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UESD6V8S2B(2011) 数据手册 ( 数据表 ) - Union Semiconductor, Inc.

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零件编号
UESD6V8S2B

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6 Pages

File Size
150.9 kB

生产厂家
UNIONSEMI
Union Semiconductor, Inc. 

General Description
The UESD6V8S2B of TVS diode array is designed to protect sensitive electronics from damage or latch-up due to ESD. For use in applications where board space is at a premium. It is unidirectional device and may be used on lines where the signal polarities are above ground, each device will protect up to two lines.
TVS diodes are solid-state devices feature large cross-sectional area junctions for conducting high transient currents, specifically for transient suppression. It offers desirable characteristics for board level protection including fast response time, low operating, low clamping voltage, and no device degradation.


FEATUREs
   Transient protection for data & power lines to
      IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
      MIL-STD-883 3015 (HBM) ±8 kV
   Protect two I/O lines
   Working Voltages: 5V
   Low Leakage current
   Low operating and clamping voltage
   Solid-state silicon avalanche technology


APPLICATIONs
   Cellular Handsets & Accessories
   Cordless Phones
   Personal Digital Assistants (PDA’s)
   Notebooks & Handhelds
   Portable Instrumentation
   Digital Cameras
   Peripherals
   MP3 Players


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