TSAL7600(2009) 数据手册 ( 数据表 ) - Vishay Semiconductors
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Vishay Semiconductors
DESCRIPTION
TSAL7600 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in a clear, untinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): ∅ 5
• Peak wavelength: λp = 940 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 30°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Infrared remote control units with high power requirements
• Free air transmission systems
• Infrared source for optical counters and card readers
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs ( Rev : 2009 )
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs ( Rev : 2012 )
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs ( Rev : 2009 )
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs ( Rev : 2009 )
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs ( Rev : 2009 )
Vishay Semiconductors
High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
Vishay Semiconductors