零件编号
TPCM8001-H
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TPCM8001-H(2004) 数据手册 ( 数据表 ) - Toshiba
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High Speed and High Efficiency DC-DC Converters
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to small and thin package
• High speed switching
• Small gate charge: Qg =19 nC (typ.)
• Low drain-source ON resistance: RDS (ON) = 7 mO (typ.)
• High forward transfer admittance: |Yfs| =36 S (typ.)
• Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
Toshiba
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII) ( Rev : 2003 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (Ultra-High-Speed U-MOSIII)
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High-Speed U-MOSIII) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (Ultra High speed U-MOSIII)
Toshiba
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