TPC6602(2002) 数据手册 ( 数据表 ) - Toshiba
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High-Speed Switching Applications
DC-DC Converter Applications
Strobe Applications
• High DC current gain: hFE = 200 to 500 (IC = −0.2 A)
• Low collector-emitter saturation voltage: VCE (sat) = −0.19 V (max)
• High-speed switching: tf = 25 ns (typ.)
TOSHIBA Transistor Silicon PNP Epitaxial Type
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TOSHIBA Transistor Silicon PNP Epitaxial Type
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TOSHIBA Transistor Silicon PNP Epitaxial Type
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TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2004 )
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TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2006 )
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TOSHIBA Transistor Silicon PNP Epitaxial Type
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2009 )
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TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2004 )
Toshiba
TOSHIBA Transistor Silicon PNP Epitaxial Type ( Rev : 2013 )
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TOSHIBA Transistor Silicon PNP Epitaxial Type
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