General Description
   The TP0610T is a low-threshold, Enhancement-mode (normally-off) transistor that utilizes a vertical DMOS structure and a well-proven silicon gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally induced secondary breakdown.

FEATUREs
• High Input Impedance and High Gain
• Low Power Drive Requirement
• Ease of Paralleling
• Low CISS and Fast Switching Speeds
• Excellent Thermal Stability
• Integral Source-Drain Diode
• Free from Secondary Breakdown

APPLICATIONs
• Logic-Level Interfaces (Ideal for TTL and CMOS)
• Solid-State Relays
• Battery-Operated Systems
• Photo-Voltaic Drives
• Analog Switches
• Power Management
• Telecommunication Switches