零件编号
TK55D10J1
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Toshiba
TK55D10J1 数据手册 ( 数据表 ) - Toshiba
Toshiba
Switching Regulator Applications
• High-Speed switching
• Low gate charge: Qg = 110 nC (typ.)
• Low drain-source ON resistance: RDS (ON) = 8.4 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 110 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 100 V)
• Enhancement mode: Vth = 1.1 to 2.3 V (VDS = 10 V, ID = 1 mA)
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