TK13A65U 数据手册 ( 数据表 ) - Toshiba
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Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ = 8.0 S (typ.)
• Low leakage current: IDSS = 100 μA (max) (VDS = 650 V)
• Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II)
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) ( Rev : 2013 )
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II) ( Rev : 2013 )
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Silicon N Channel MOS Type (DTMOS II) Field Effect Transistor
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS)
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π-MOS II)
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (π-MOS II)
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II)
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS II) ( Rev : 2003 )
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS II)
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