零件编号
TGF2933
Other PDF
no available.
PDF
page
24 Pages
File Size
4.2 MB
生产厂家

Qorvo, Inc
Product Overview
The Qorvo TGF2933 is a 7 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 25 GHz and 28 V supply. The device is constructed with Qorvo’s proven QGaN15 process. The device can support pulsed, CW, and linear operations.
Lead-free and ROHS compliant
KEY FEATUREs
• Frequency: DC to 25 GHz
• Output Power (P3dB)1: 7.2 W
• Linear Gain1: 15 dB
• Typical PAE3dB1: 57%
• Typical Noise Figure1: 1.3dB
• Operating Voltage: 28 V
• CW and Pulse capable
• Non-linear & Noise Models available
Note 1: @ 10 GHz
APPLICATIONs
• Defense and Aerospace
• Broadband wireless
• Low noise amplifier