TC551402J 数据手册 ( 数据表 ) - Toshiba
生产厂家

Toshiba
DESCRIPTION
The TC551402J is a 4,194,304-bit high speed static random access memory (SRAM), it is possible to change the organization between 4,194,304 words by 1 bit and 1,048,576 words by 4 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 5V power supply.
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4194304-BIT (4194304-WORD BY 1-BIT) CMOS STATIC RAM
MITSUBISHI ELECTRIC
4194304-bit (4194304-word by 4-bit) CMOS static RAM
MITSUBISHI ELECTRIC
4194304-BIT (4194304-WORD BY 1-BIT) CMOS STATIC RAM
MITSUBISHI ELECTRIC
4194304-BIT (1048576-WORD BY 4-BIT) CMOS STATIC RAM
MITSUBISHI ELECTRIC
4194304-BIT (1048576-WORD BY 4-BIT) CMOS STATIC RAM
MITSUBISHI ELECTRIC
4194304-BIT (4194304-WORD BY 1-BIT) CMOS STATIC RAM
MITSUBISHI ELECTRIC
16777216-BIT (1048576-WORD BY 16-BIT / 2097152-WORD BY 8-BIT) CMOS STATIC RAM
Hitachi -> Renesas Electronics
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
Mitsumi
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
MITSUBISHI ELECTRIC
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM 1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
MITSUBISHI ELECTRIC