General Description
   This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block, high efficiency switch mode power supplies, power factor correction, electronic lamp ballast based on half bridge.

FEATUREs
◾ High ruggedness
◾ RDS(ON) (Max 0.85Ω)@VGS=10V
◾ Gate Charge (Typ 35nC)
◾ Improved dv/dt Capability
◾ 100% Avalanche Tested