General Description
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.

FEATUREs
● High ruggedness
● Low RDS(ON) (Typ 14mΩ)@VGS=10V
                           (Typ 16mΩ)@VGS=4.5V
● Low Gate Charge (Typ 58nC)
● Improved dv/dt Capability
● 100% Avalanche Tested
● Application:DC-DC Converter, Inverter,
   Synchronous Rectification