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SW069R10VS PDF
SW069R10VS 数据手册 ( 数据表 ) - Xian Semipower Electronic Technology Co., Ltd.
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Xian Semipower Electronic Technology Co., Ltd.
General Description
This power MOSFET is produced with advanced technology of SAMWIN. This technology enable the power MOSFET to have better characteristics, including fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.
FEATUREs
• High ruggedness
• Low RDS(ON) (Typ 7.1mΩ)@VGS=10V
• Low Gate Charge (Typ 45nC)
• Improved dv/dt Capability
• 100% Avalanche Tested
• Application: Li Battery Protect Board,
Synchronous Rectification, Inverter
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