GENERAL DESCRIPTION
   SVF4N90F/MJ/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
   These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers.

FEATURES
✦ 4A,900V,RDS(on)(typ.)=2.7@VGS=10V
✦ Low gate charge
✦ Low Crss
✦ Fast switching
✦ Improved dv/dt capability