零件编号
SVD3410D
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PDF
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4 Pages
File Size
843.3 kB
生产厂家
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
SVD3410D 数据手册 ( 数据表 ) - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Description：
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
FEATUREs：
1) VDS=100V,ID=15A,RDS(ON)< 100mΩ @VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.
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