STW62N65M5(2013) 数据手册 ( 数据表 ) - STMicroelectronics
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STMicroelectronics
Description
This device is an N-channel Power MOSFET based on MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout. The resulting product offers extremely low onresistance, making it particularly suitable for applications requiring high power and superior efficiency.
FEATUREs
• Designed for automotive applications and AEC-Q101 qualified
• Extremely low RDS(on) * area
• Low gate charge and input capacitance
• Excellent switching performance
• 100% avalanche tested
APPLICATIONs
• Switching applications
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