STW265N6F6AG 数据手册 ( 数据表 ) - STMicroelectronics
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Description
This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
FEATUREs
• Designed for automotive applications
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
APPLICATIONs
• Switching applications
Automotive-grade N-channel 60 V, 2.3 mΩ typ., 180 A STripFET™ F6 Power MOSFET in a TO-220 package
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Automotive-grade N-channel 60 V, 4.4 mΩ typ., 80 A STripFET™ F6 Power MOSFET in a DPAK package
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Automotive-grade P-channel -60 V, 0.13 Ω typ., -10 A STripFET™ F6 Power MOSFET in a DPAK package
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N-channel 600 V, 60 mΩ typ., 42 A MDmesh M2 Power MOSFET in a TO-247 package
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Automotive-grade N-channel 650 V, 0.041 Ω typ., 46 A MDmesh™ V Power MOSFET in a TO-247 package ( Rev : 2013 )
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N-channel 40 V, 2.1 mΩ typ., 120 A STripFET™ F6 Power MOSFET in a TO-220 package
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Automotive-grade N-channel 650 V, 0.041 Ω typ., 46 A MDmesh™ M5 Power MOSFET in a TO-247 package
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Automotive-grade N-channel 600 V, 0.085 Ω typ., 34 A MDmesh™ DM2 Power MOSFET in a TO-247 package
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N-channel 600 V, 0.150 Ω typ., 19.5 A, FDmesh II Power MOSFET in a TO-247 package ( Rev : 2020 )
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N-channel 500 V, 0.08 Ω typ., 45 A MDmesh™ Power MOSFET in a TO-247 package ( Rev : 2016 )
STMicroelectronics