STS8C5H30L(2004) 数据手册 ( 数据表 ) - STMicroelectronics
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STMicroelectronics
DESCRIPTION
This MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
General Features
■ TYPICAL RDS(on) (N-Channel) = 0.018 Ω
■ TYPICAL RDS(on) (P-Channel) = 0.045 Ω
■ CONDUCTION LOSSES REDUCED
■ SWITCHING LOSSES REDUCED
■ LOW THRESHOLD DRIVE
■ STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY
APPLICATIONS
■ DC/DC CONVERTERS
■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
■ POWER MANAGEMENT IN CELLULAR PHONES
■ DC MOTOR DRIVE
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