STS4DPF20L 数据手册 ( 数据表 ) - STMicroelectronics
生产厂家

STMicroelectronics
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
■ TYPICAL RDS(on) = 0.07 Ω
■ STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY
■ LOW THRESHOLD DRIVE
APPLICATIONS
■ BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
■ POWER MANAGEMENT IN CELLULAR PHONES
Page Link's:
1
2
3
4
5
6
7
8
DUAL P-CHANNEL 30V - 0.07 Ω - 4A SO-8 STripFET™ POWER MOSFET
STMicroelectronics
P-CHANNEL 20V - 0.07Ω - 4A SO-8 STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER
STMicroelectronics
P-CHANNEL 20V - 0.06Ω - 4A SO-8 STripFET™ MOSFET PLUS SCHOTTKY RECTIFIER
STMicroelectronics
P-CHANNEL 20V - 0.090 Ω - 4A SO-8 2.7V-DRIVE STripFET™ II POWER MOSFET
STMicroelectronics
DUAL P-CHANNEL 20V - 0.090 Ω - 3A SO-8 STripFET™ POWER MOSFET
STMicroelectronics
20V、4A Dual N-Channel MOSFET
E-CMOS Corporation
-4A, -20V P-CHANNEL ENHANCEMENT MODE MOSFET ( Rev : 2015 )
Unisonic Technologies
-4A, -20V P-CHANNEL ENHANCEMENT MODE MOSFET
Unisonic Technologies
P-Channel Power MOSFET –20V, –4A, 83mΩ, Single MCPH6
ON Semiconductor
Dual N-channel 30V - 0.039Ω - 4A SO-8 STripFET™ Power MOSFET ( Rev : 2006 )
STMicroelectronics