Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
FEATUREs
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
APPLICATIONs
• Switching applications
N-channel 800 V, 0.95 Ω typ., 6.5 A MDmesh™ II Power MOSFETs in DPAK, IPAK, TO-220FP and TO-220 packages
STMicroelectronics
N-channel 250 V, 0.140 Ω typ., 17 A STripFET™ II Power MOSFETs in DPAK, TO-220FP and TO-220 packages ( Rev : 2018 )
STMicroelectronics
N-channel 600 V, 0.8 Ω typ., 5 A MDmesh™ II Power MOSFETs in DPAK, TO-220FP and IPAK packages ( Rev : 2018 )
STMicroelectronics
N-channel 600 V, 0.53 Ω typ., 10 A MDmesh™ II Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages ( Rev : 2015 )
STMicroelectronics
N-channel 600 V, 280 mΩ typ., 11 A MDmesh II Power MOSFETs in a TO-220FP, I²PAK, TO-220 and IPAK packages ( Rev : 2020 )
STMicroelectronics
N-channel 600 V, 0.20 Ω typ., 16 A MDmesh™ II Power MOSFETs in D²PAK, TO-220FP and TO-220 packages ( Rev : 2018 )
STMicroelectronics
N-channel 600 V, 0.145 Ω typ., 21 A, FDmesh™ II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.13 Ω typ., 23 A FDmesh™ II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 0.168 Ω typ., 17 A MDmesh™ II Power MOSFETs in TO-220FP, I²PAK, TO-220 and TO-247 packages
STMicroelectronics
N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH™ Power MOSFETs in D²PAK, IPAK, DPAK, TO-220 and TO-220FP packages ( Rev : 2018 )
STMicroelectronics