零件编号
STP3N150
PDF
page
16 Pages
File Size
474.6 kB
生产厂家
STMicroelectronics
STP3N150 数据手册 ( 数据表 ) - STMicroelectronics
STMicroelectronics
Description
Using the well consolidated high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics.
FEATUREs
■ 100% avalanche tested
■ Intrinsic capacitances and Qg minimized
■ High speed switching
■ Fully isolated TO-3PF and TO-220FH plastic
packages
■ Creepage distance path is 5.4 mm (typ.) for
TO-3PF
■ Creepage distance path is > 4 mm for
TO-220FH
APPLICATION
■ Switching applications
零件编号
产品描述 (功能)
视图
生产厂家
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