零件编号
STP28N60DM2
产品描述 (功能)
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STP28N60DM2(2017) 数据手册 ( 数据表 ) - STMicroelectronics
STMicroelectronics
Description
These high voltage N-channel Power MOSFETs are part of the MDmesh™ DM2 fast recovery diode series. They offer very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering them suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. i
FEATUREs
• Fast-recovery body diode
• Extremely low gate charge and input
capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
APPLICATIONs
• Switching applications
零件编号
产品描述 (功能)
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生产厂家
N-channel 600 V, 0.13 Ω typ., 23 A FDmesh™ II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages
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N-channel 600 V, 0.168 Ω typ., 17 A MDmesh™ II Power MOSFETs in TO-220FP, I²PAK, TO-220 and TO-247 packages
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N-channel 600 V, 0.13 Ω typ., 21 A MDmesh™ DM2 Power MOSFET in a TO-220FP package
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N-channel 600 V, 0.076 Ω typ., 34 A MDmesh™ M2 EP Power MOSFETs in D²PAK, TO-220 and TO-247 packages
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N-channel 600 V, 0.076 Ω typ., 34 A MDmesh™ M2 EP Power MOSFETs in D²PAK, TO-220 and TO-247 packages ( Rev : 2015 )
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N-channel 600 V, 0.14 Ω typ., 20 A MDmesh™ M2 Power MOSFETs in TO-220 and TO-247 packages
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