STP11NM60FD 数据手册 ( 数据表 ) - VBsemi Electronics Co.,Ltd
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VBsemi Electronics Co.,Ltd
FEATURES
• Reduced trr, Qrr, and IRRM
• Low figure-of-merit (FOM) Ron x Qg
• Low input capacitance (Ciss)
• Low switching losses due to reduced Qrr
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd
N-Channel 650 V (D-S) MOSFET
VBsemi Electronics Co.,Ltd