Description
These devices utilize the 7th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R DS(on) in all packages.
FEATUREs
• Ultra low on-resistance
• 100% avalanche tested
APPLICATIONs
• Switching applications
N-channel 100 V, 0.0068 Ω typ., 80 A, STripFET™ VII DeepGATE™ Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220 ( Rev : 2013 )
STMicroelectronics
N-channel 100 V, 5.1 mΩ typ., 110 A, STripFET™ VII DeepGATE™ Power MOSFETs in TO-220FP and TO-220 packages
STMicroelectronics
N-channel 100 V, 6.8 mΩ typ., 80 A STripFET F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages
STMicroelectronics
N-channel 525 V, 2.5 A, 2.1 Ω typ., SuperMESH3™ Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
STMicroelectronics
N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ V Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220 and IPAK packages
STMicroelectronics
N-channel 100 V, 0.0145 Ω typ., 45 A, STripFET™ VII DeepGATE™ Power MOSFETs in DPAK, I2PAK and TO-220 packages ( Rev : 2013 )
STMicroelectronics
N-channel 500 V, 0.24 Ω typ., 13 A MDmesh™ M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packages ( Rev : 2018 )
STMicroelectronics
N-channel 500 V, 0.24 Ω typ., 13 A MDmesh™ M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packages
STMicroelectronics
N-channel 100 V, 0.008 Ω typ., 80 A STripFET™ VII DeepGATE™ Power MOSFETs in DPAK, TO-220FP, H2PAK-2 and TO-220
STMicroelectronics
N-channel 600 V, 0.63 Ω typ., 6.5 A MDmesh™ II Power MOSFETs in DPAK, TO-220FP and TO-220 packages ( Rev : 2018 )
STMicroelectronics