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STF11N50M2(2014) 数据手册 ( 数据表 ) - STMicroelectronics

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零件编号
STF11N50M2

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19 Pages

File Size
991.1 kB

生产厂家
ST-Microelectronics
STMicroelectronics 

Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.


FEATUREs
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected


APPLICATIONs
• Switching applications


零件编号
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生产厂家
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