零件编号
STD9N60M2
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no available.
PDF
page
21 Pages
File Size
1.4 MB
生产厂家
STMicroelectronics
STD9N60M2 数据手册 ( 数据表 ) - STMicroelectronics
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.
FEATUREs
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
零件编号
产品描述 (功能)
视图
生产厂家
N-channel 600 V, 0.72 Ω typ., 5.5 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220FP and I2PAKFP packages
STMicroelectronics
N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus™ low Qg Power MOSFETs in D²PAK, DPAK, TO-220 and IPAK packages
STMicroelectronics
N-channel 600 V, 0.53 Ω typ., 10 A MDmesh™ II Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages ( Rev : 2015 )
STMicroelectronics
N-channel 650 V, 0.6 Ω typ., 7 A MDmesh II Plus™ low Qg Power MOSFETs in DPAK, TO-220 and IPAK packages
STMicroelectronics
N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220, IPAK and TO-247 packages
STMicroelectronics
N-channel 500 V, 0.73 Ω typ., 5 A MDmesh™II Power MOSFET in DPAK, TO-220 and IPAK packages
STMicroelectronics
N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh II Plus™ low Qg Power MOSFET in D2PAK and DPAK packages
STMicroelectronics
N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus™ low Qg Power MOSFET in D2PAK, TO-220 and TO-247 packages ( Rev : 2014 )
STMicroelectronics
N-channel 600 V, 0.8 Ω typ., 5 A MDmesh™ II Power MOSFETs in DPAK, TO-220FP and IPAK packages ( Rev : 2018 )
STMicroelectronics
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