零件编号
STD7NK40Z
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5 Pages
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1,018.8 kB
生产厂家

SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Description:
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
FEATUREs:
1) VDS=400V,ID=6A,RDS(ON)<1000mΩ @VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra RDS(ON).
5) Excellent package for good heat dissipation.