STC04IE170HP(2009) 数据手册 ( 数据表 ) - STMicroelectronics
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STMicroelectronics
Description
The STC04IE170HP is manufactured in Monolithic ESBT technology, aimed at providing the best performance in high frequency / high voltage applications. It is designed for use in gate driven based topologies.
FEATUREs
■ High voltage / high current cascode configuration
■ Low equivalent ON resistance
■ Very fast-switch, up to 150 kHz
■ Squared RBSOA, up to 1700 V
■ Very low CISS driven by RG = 47 Ω
■ Very low turn-off cross over time
APPLICATION
■ Aux SMPS for three-phase mains
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Emitter Switched Bipolar Transistor ESBT® 900 V - 12 A - 0.083 Ω
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