STB9NB50 数据手册 ( 数据表 ) - STMicroelectronics
生产厂家

STMicroelectronics
N - CHANNEL ENHANCEMENT MODE Power MESH™ MOSFET
■ TYPICAL RDS(on) = 0.75 Ω
■ EXTREMELY HIGH dv/dt CAPABILITY
■ AVALANCHERUGGED TECHNOLOGY
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100°C
■ VERY LOW INTRINSIC CAPACITANCE
■ GATE CHARGE MINIMIZED
■ LOW LEAKAGE CURRENT
■ APPLICATION ORIENTED CHARACTERIZATION
■ FOR SMD D2PAK VERSION CONTACT SALES OFFICE
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLY (SMPS)
■ DC-AC CONVERTER FOR WELDING EQUIPMENT AND UNINTERRUPTABLE POWER SUPPLY (UPS)
Page Link's:
1
2
3
4
5
6
7
8
N–CHANNEL POWER MOSFET ENHANCEMENT MODE
Semelab - > TT Electronics plc
N–CHANNEL ENHANCEMENT MODE POWER MOSFET
Semelab - > TT Electronics plc
N-channel Enhancement-mode Power MOSFET
Advanced Power Electronics Corp
N-channel Enhancement-mode Power MOSFET
Silicon Standard Corp.
N-channel Enhancement-mode Power MOSFET
Silicon Standard Corp.
N-channel Enhancement-mode Power MOSFET
Advanced Power Electronics Corp
N-channel Enhancement-mode Power MOSFET
Silicon Standard Corp.
N-channel Enhancement-mode Power MOSFET
Silicon Standard Corp.
N-channel Enhancement-mode Power MOSFET
Silicon Standard Corp.
N-channel Enhancement-mode Power MOSFET
Silicon Standard Corp.