STB80NF10T4 数据手册 ( 数据表 ) - STMicroelectronics
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STMicroelectronics
Description
This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer application. It is also intended for any application with low gate charge drive requirements.
FEATUREs
■ Exceptional dv/dt capability
■ 100% Avalanche tested
■ Application oriented characterization
APPLICATIONs
■ Switching applications
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N-channel 55 V, 0.0060Ω, 80 A, TO-220, D2PAK STripFET™ II Power MOSFET
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N-channel 100V - 0.030Ω - 40A - D2PAK/TO-220 Low gate charge STripFET™ II Power MOSFET
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N-CHANNEL 60V - 0.012 Ω - 60A TO-220/TO-220FP/D2PAK STripFET™ II POWER MOSFET ( Rev : 2003 )
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N-channel 55 V, 0.0062 Ω, 80 A, TO-220, D2PAK, I2PAK STripFET™ II Power MOSFET
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N-CHANNEL 100V - 0.024Ω - 50A TO-220/D2PAK/I2PAK LOW GATE CHARGE STripFET™ II POWER MOSFET
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N-channel 30V - 0.0075Ω - 70A - D2PAK - I2PAK - TO-220 Low gate charge STripFET™ II Power MOSFET ( Rev : 2006 )
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N-CHANNEL 100V - 0.024Ω - 50A TO-220/D2PAK/I2PAK LOW GATE CHARGE STripFET™ II POWER MOSFET
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N-channel 100V - 0.115Ω - 15A - D2PAK/TO-220/TO-220FP Low gate charge STripFET™ II Power MOSFET
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N-channel 100V - 0.038Ω - 35A - D2PAK/TO-220/TO-220FP Low gate charge STripFET™ II Power MOSFET
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N-channel 75 V, 0.0095 Ω, 80 A TO-220, D2PAK, I2PAK STripFET™ II Power MOSFET
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