Description
These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
• Industry’s lowest RDS(on)
• Industry’s best figure of merit (FoM)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
APPLICATIONs
• Switching applications
N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh™ K5 Power MOSFETs in TO-220FP and I²PAKFP packages
STMicroelectronics
N-channel 800 V, 0.95 Ω typ., 6 A MDmesh K5 Power MOSFETs in DPAK, TO-220 and IPAK packages ( Rev : 2020 )
STMicroelectronics
N-channel 800 V, 0.37 Ω typ., 12 A MDmesh™ K5 Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247
STMicroelectronics
N-channel 800 V, 3.5 Ω typ., 2 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages
STMicroelectronics
N-channel 800 V, 2.1 Ω typ., 3 A MDmesh™ K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages
STMicroelectronics
N-channel 650 V, 0.43 Ω typ., 9 A MDmesh™ M5 Power MOSFETs in a DPAK, D²PAK, TO-220FP and TO-220 packages ( Rev : 2018 )
STMicroelectronics
N-channel 650 V, 0.117 Ω typ., 24 A MDmesh™ M2 Power MOSFETs in D²PAK, TO-220FP, TO-220 and I²PAK packages
STMicroelectronics
N-channel 650 V, 70 mΩ typ., 33 A, MDmesh M5 Power MOSFETs in D²PAK, TO-220FP, I²PAK, TO-220 and TO-247 packages ( Rev : 2019 )
STMicroelectronics
N-channel 600 V, 3.2 Ω typ., 2.4 A SuperMESH™ Power MOSFETs in D²PAK, IPAK, DPAK, TO-220 and TO-220FP packages ( Rev : 2018 )
STMicroelectronics
N-channel 650 V, 0.56 Ω typ., 7 A MDmesh™ V Power MOSFET in D²PAK, I²PAK, TO-220, TO-220FP, DPAK and IPAK packages ( Rev : 2012 )
STMicroelectronics