STB155N3H6 数据手册 ( 数据表 ) - STMicroelectronics
生产厂家

STMicroelectronics
Description
These devices are 30 V N-channel Power MOSFETs realized using ST`s proprietary STripFET™ VI technology. The resulting Power MOSFET exhibits the lowest R DS(on) in all packages.
FEATUREs
■ RDS(on) * Qg industry benchmark
■ Extremely low on-resistance RDS(on)
■ High avalanche ruggedness
APPLICATION
■ Switching applications
■ Automotive
Page Link's:
1
2
3
4
5
6
7
8
9
10
More Pages
N-channel 30 V, 2.4 mΩ , 80 A, D²PAK, DPAK STripFET™VI DeepGATE™ Power MOSFET
STMicroelectronics
Power MOSFET 24 V, 80 A, N−Channel DPAK
ON Semiconductor
Power MOSFET 20 A, 30 V, N−Channel DPAK ( Rev : 2014 )
ON Semiconductor
MOSFET –Power, N-Channel, DPAK 20 A, 30 V
ON Semiconductor
N-channel 30 V, 0.0024 Ω , 80 A, DPAK, IPAK, TO-220 STripFET™ VI DeepGATE™ Power MOSFET
STMicroelectronics
N-channel 30 V, 4 mΩ typ., 80 A Power MOSFET in a DPAK package
STMicroelectronics
N-channel 30 V, 2.3 mΩ, 80 A D²PAK STripFET™ Power MOSFET ( Rev : 2011 )
STMicroelectronics
N-channel 30 V, 0.0045 Ω, 80 A, DPAK planar STripFET™ II Power MOSFET ( Rev : 2009 )
STMicroelectronics
Power MOSFET 30 V, 88 A, Single N--Channel, DPAK/IPAK
ON Semiconductor
Power MOSFET 30 V, 117 A, Single N−Channel, DPAK/IPAK ( Rev : 2016 )
ON Semiconductor