DESCRIPTION
   The ST1002 is the N-Channel logic enhancement mode power field effect transistor is produce using high cell density, DMOS trench technology.
   This high-density process is especially tailored to minimize on-state resistance. These device are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high side switching.

FEATURE
● 100V/3.0A, RDS(ON) = 135mΩ
                          @VGS = 10V
● 100V/2.5A, RDS(ON) = 140mΩ
                          @VGS = 4.5V
● Super high density cell design for
   extremely low RDS(ON)
● Exceptional on-resistance and maximum
   DC current capability
● SOT-23-3L package design