零件编号
SSS6N70A
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生产厂家
Samsung
SSS6N70A 数据手册 ( 数据表 ) - Samsung
Samsung
Advanced Power MOSFET
BVDSS= 700 V RDS(on) = 1.8 W ID= 4 A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 mA (Max.) @ VDS= 700V
Low RDS(ON) : 1.552 W(Typ.)
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