SSS10N60A 数据手册 ( 数据表 ) - Fairchild Semiconductor
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Fairchild Semiconductor
Advanced Power MOSFET
BVDSS= 600 V RDS(on) = 0.8 ID= 5.1 A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 (Max.) @ VDS= 600V
Low RDS(ON) : 0.646 (Typ.)
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Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor