SSM6N815R 数据手册 ( 数据表 ) - Toshiba
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Features
(1) 4.0 V drive
(2) Low drain-source on-resistance
: RDS(ON) = 115 mΩ (typ.) (@VGS = 4.0 V)
RDS(ON) = 101 mΩ (typ.) (@VGS = 4.5 V)
RDS(ON) = 84 mΩ (typ.) (@VGS = 10 V)
APPLICATIONs
• Power Management Switches
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MOSFETs Silicon N-Channel MOS
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MOSFETs Silicon N-Channel MOS
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MOSFETs Silicon N-Channel MOS ( Rev : 2014 )
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MOSFETs Silicon N-Channel MOS
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MOSFETs Silicon N-Channel MOS
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MOSFETs Silicon N-Channel MOS
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MOSFETs Silicon N-Channel MOS
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