SSM6K405TU(2007) 数据手册 ( 数据表 ) - Toshiba
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○ High-Speed Switching Applications
○ Power Management Switch Applications
• 1.5V drive
• Low ON-resistance: Ron = 307 mΩ (max) (@VGS = 1.5V)
Ron = 214 mΩ (max) (@VGS = 1.8V)
Ron = 164 mΩ (max) (@VGS = 2.5V)
Ron = 126 mΩ (max) (@VGS = 4.0V)
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2010 )
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TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
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TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2008 )
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TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
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TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2012 )
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TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Toshiba
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )
Toshiba