SSM2306A 数据手册 ( 数据表 ) - Secos Corporation.
生产厂家

Secos Corporation.
Description
The SSM2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SSM2306A is universally used for all commercial-industrial surface mount applications.
FEATUREs
* Lower On-Resistance
* Capable Of 2.5V Gate drive
5.5A, 30V, RDS(ON) 45mΩ N-Channel Enhancement Mode Power Mos.FET
Secos Corporation.
5.5A, 30V, RDS(ON) 45mΩ N-Channel Enhancement Mode Power Mos.FET ( Rev : 2002 )
Secos Corporation.
-5A, -20V, RDS(ON) 65mΩ P-Channel Enhancement Mode Power Mos.FET
Secos Corporation.
-5A, -20V, RDS(ON) 65mΩ P-Channel Enhancement Mode Power Mos.FET ( Rev : 2010 )
Secos Corporation.
-4.0A, -30V, RDS(ON) 80mΩ P-Channel Enhancement Mode MOS.FET ( Rev : 2010 )
Secos Corporation.
-2.3A, -30V, RDS(ON) 135mΩ P-Channel Enhancement Mode Power Mos.FET
Secos Corporation.
-4.0A, -30V, RDS(ON) 80mΩ P-Channel Enhancement Mode Power Mos.FET ( Rev : 2002 )
Secos Corporation.
-3.7A, -30V,RDS(ON) 75mΩ P-Channel Enhancement Mode Power Mos.FET
Secos Corporation.
2A, -30V, RDS(ON) 170mΩ P-Channel Enhancement Mode Power Mos.FET
Secos Corporation.
-50A, -30V,RDS(ON) 14mΩ P-Channel Enhancement Mode Power Mos.FET
Secos Corporation.