Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

FEATUREs and Benefits
■ Advanced trench MOSFET process technology
■ Special designed for PWM, load switching and general purpose applications
■ Ultra low on-resistance with low gate charge
■ Fast switching and reverse body recovery
■ 175℃ operating temperature
■ Lead free product