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SRAF1030 数据手册 ( 数据表 ) - Mospec Semiconductor

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零件编号
SRAF1030

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Mospec
Mospec Semiconductor 

Switchmode Full Plastic Dual Schottky Barrier Power Rectifiers

Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.


FEATUREs
* Low Forward Voltage.
* Low Switching noise.
* High Current Capacity
* Guarantee Reverse Avalanche.
* Guard-Ring for Stress Protection.
* Low Power Loss & High efficiency.
* 150℃ Operating Junction Temperature
* Low Stored Charge Majority Carrier Conduction.
* Plastic Material used Carries Underwriters Laboratory
   Flammability Classification 94V-O
* ESD: 8KV(Min.) Human-Body Model
* In compliance with EU RoHs 2002/95/EC directives


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