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SPB-3018Z 数据手册 ( 数据表 ) - Sirenza Microdevices => RFMD

SPB-3018 image

零件编号
SPB-3018Z

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page
9 Pages

File Size
202.8 kB

生产厂家
Sirenza
Sirenza Microdevices => RFMD 

Product Description
   The SPB-3018 is high-efficiency InGaP/GaAs Heterojuction Bipolar Transistor (HBT) amplifier RFIC. This amplifier incorporates an on-chip Class AB bias circuit which provides excellent efficiency while maintaining good linearity. The on-chip bias also allows the device output power (and current) to drive up towards saturation as the input power increases. The SPB-3018 is an ideal choice for multi-carrier as well as digital wireless telecom or general wireless applications in the 400-2500 MHz range. This amplifier is a robust, reliable, and rugged part with Class 1C HBM ESD rating, low operating junction temperature (Tj<125 ºC at 85 ºC lead), and excellent moisture resistance (MSL 1).

Product Features
• Available in Lead Free, RoHS compliant, & Green packaging
• Efficient Class AB operation
• P1dB = 30 dBm @ 1960MHz
• High Linearity/ACP performance
• Robust 1000V ESD, Class 1C
• MSL 1 moisture rating
• Power shutdown using VPC (less than 5uA IDQ)


APPLICATIONs
• W-CDMA, PCS, Cellular Systems
• Multi-Carrier Applications


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