VDSS 200V
ID(cont) 65A
RDS(on) 0.026Ω

• Faster Switching
• Lower Leakage
• TO–267 Hermetic Package

StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout.