SIDC42D120H8 数据手册 ( 数据表 ) - Infineon Technologies
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Infineon Technologies
Description
Recommended for:
• Power modules
• Discrete devices
FEATUREs
• VRRM = 1200 V
• IFn = 75 A
• 1200 V emitter controlled technology
• Soft, fast switching
• Low reverse recovery charge
• Small temperature coefficient
Potential applications
• SMPS
• Resonant applications
• Drives
Fast switching emitter controlled 3 diode chip
Infineon Technologies
Fast switching emitter controlled 3 diode chip
Infineon Technologies
Fast switching emitter controlled 3 diode chip
Infineon Technologies
Fast switching emitter controlled 3 diode chip
Infineon Technologies
Fast switching emitter controlled 3 diode chip
Infineon Technologies
Fast switching emitter controlled 3 diode chip
Infineon Technologies
Fast switching emitter controlled 3 diode chip
Infineon Technologies
Fast Switching Emitter Controlled Diode
Infineon Technologies
Fast Switching Emitter Controlled Diode ( Rev : 2013 )
Infineon Technologies
Fast Switching Emitter Controlled Diode ( Rev : 2013 )
Infineon Technologies